Depto. de Semicondut. Instrumentos e Fotônica

Artigos publicados em revistas de circulação internacional especializadas

1. E.J.Corat, V.J.Trava-Airoldi, N.F.Leite, M.C.A.Nono e V.Baranauskas, ``Diamnd growth with CF4 addition in hot-filament chemical vapour deposition'', Journal of Materials Science, 32, 941-947, (1997).
2. M.C.Valente Lopes, S.G.dos Santos, C.M.Hasenack e V.Baranauskas, ``The Effect of Si/SiO2 interface roughness on electronic roughness'', Journal of the Electrochemical Society, 143, 1021-1025, (1997).
3. V.Baranauskas, R.Vitlina, G.Sourdutovich, J.Kolenda, J.S.Fragalli e M.Misoguti, ``An interface method for the determination of thin film anisotropy'', Thin Solid Films, 279, 119-124, (1997).
4. S.A.Moshkalyov, J.A.Diniz, J.W.Swart, P.J.Tatsch e M.Machida, ``Deposition of silicon nitride by low-pressure ECR-CVD in N2/Ar/SiH4'', Journal of Vacuum Science and Technology, B15(6), 2682-2687, (1997).
5. S.A.Moshkalyov, J.D.Diniz, P.J.Tatsch, M.Machida e J.W.Swart, ``Deposition of Silicon by Low-Pressure electron cynclotron resonance plasma enhanced chemical vapor deposition in N2/Ar/SiH4'', Journal of Vacuum Science and Technology, 15(6), 2682-2687, (1997).
6. V.Baranauskas, R.Vitlina e G.I.Surdutovich, ``Enhanced Nonlinear Optical Response from a Stee and Gently Sloping LowRelief Surface: What is the Difference?'', Brazilian Journal of Physics, 27/A(4), 264-268, (1997).
7. V.Baranauskas, R.Vitlina e G.I.Surdutovich, ``Enhanced Nonlinear Optical Response form a Stee andGently Sloping Low Relief Surface: What is the Difference?'', Brazilian Journal of Physics, 27(4), 264-268, (1997).