Depto. de Semicondut. Instrumentos e Fotônica

Resumos publicados em anais de congressos nacionais

1. J.Bettini, M.M.G.de Carvalho, R.T.Yoshioka, J.W.Swart, C.A.C.De Mendonça, M.A.Cotta e I.L.Torriani, ``Growth and Characterization of In(x)Ga(1-x)P on GaAs by Chemical Beam Epitaxy'', 8th Brazilian Workshop on Semiconductor Physics, MO, 19, (1997).
2. A.C.Saragossa Ramos, A.Sansigolo Lujan e J.W.Swart, ``Reactive Ion Etching of GaAs using SiCl4/Ar'', XII Conference of the Brazilian Microelectronics Society, 1, 34-36, (1997).
3. J.A.Diniz, S.A.Moshkalyov, P.J.Tatsch e J.W.Swart, ``Silicon Nitride Deposited by ECR-CVD at room-temperature'', XII Conference of the Brazilian Microelectronics Society, s/n, 10, (1997).
4. R.T.Yoshioka, A.C.Redolfi, J.W.Swart, J.Bettini e M.M.G.de Carvalho, ``Study of epitaxial growth and fabrication of InGaP/GaAs HBT's'', XII Conference of the Brazilian Microelectronics Society, s/n, 35, (1997).