Departamento de Física de Estado Sólido

Resumos publicados em anais de congressos internacionais

1. O.F.de Lima, M.A.Avila e C.A.Cardoso, ``Studies of paramagnetic frozen states in Nbabd Ta samples'', 5th Int.Conf. Materials and Mechanisms of Supercondutivity, China , s/n, 115-116, (1997).
2. O.F.de Lima e R.A.Ribeiro, ``Diamagnetic peaks in magnetization versus temperature curves caused by flux trapped relaxation observed in YBa(2)Cu(3)O(7-delta)'', 5th Int. Conf. on Materials and Mechanisms of Supercondutivity, China , s/n, 120-121, (1997).
3. V.Lemos, A.P.Lima, A.A.Quivy, R.Enderlein, J.R.Leite e W.Carvalho Jr, ``Defects of interface structure en GaAs/AlAs MQWs'', Symp. on Defect Dependent Processes in Insulators and Semiconductors, Brasil , s/n, 49, (1997).
4. M.A.Hayashi, L.P.Cardoso, J.Bettini, M.M.G.de Carvalho e S.L.Morelhão, ``High resolution synchrotron radiation renninger scan of InGaP/GaAs(001)'', 6th Int Conf. Chemical Beam Epitaxy and Related Growth Techniques, Suica , s/n, 1-2, (1997).
5. L.H.Avanci, M.A.Hayashi, L.P.Cardoso, S.L.Morelhao, F.Riesz, K.Rakennus e T.Hakkarainen, ``Mapping of Bragg-surface diffraction of InP/GaAs(100) structure'', 6th Int. Conf. Chemical Beam Epitaxy and Related Growth Techniques, Suica , s/n, 3-4, (1997).
6. L.H.Avanci, L.P.Cardoso, S.P.Collins, S.E.Girdwood, M.A.Hayashi, S.L.Morelhao, D.Pugh, K.J.Roberts e J.N.Sherwood, ``X-ray multiple diffraction on station 16.3'', SRS Users Meeting, Inglaterra , s/n, 1, (1997).
7. L.H.Avanci, S.L.Morelhao, L.P.Cardoso, S.E.Girdwood, D.Pugh, J.N.Sherwood, J.M.Sasaki e K.J.Roberts, ``Synchrotron radiation x-ray multiple diffraction study of low voltage electric field effect on organic nonlinear optical material MBANP via an examination of Bragg-surface diffraction reflections'', SRS Users Meeting, Inglaterra , s/n, 1, (1997).
8. A.Tabata, R.Enderlein, A.P.Lima, J.R.Leite, V.Lemos, S.Kaiser, D.Schikora, B.Schõttker, U.Kõhler e K.Lischka, ``Micro-Raman and transmission electron microscopy analysis of cubic GaN layers grown on (001) GaAs'', International Conference in Silicon Carbide, III-Nitrides Rel. Mat, Suecia , s/n, 650, (1997).