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Centro de Componentes Semicondutores
Produções / Artigos publicados em periódicos
Artigos publicados em periódicos especializados arbitrados
Circulação Nacional
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DOI, I.; MARINS, E. S. V. P.; MESTANZA, S.N.M.; Influence of Nucleotion Parameters in Spatial Distribution of the Ge Nanocrystals., 10/2006, Activity Report (Laboratório Nacional de Luz Síncrotron),Vol. 1, pp.1-3, Campinas, SP, Brasil, 2006 *
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2.
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DOI, I.; MARINS, E. S. V. P.; SWART, Jacobus Willibrordus; C. DE QUEIROZ, Jose Eudoxio; Influence of Post-Annealing Time in Gas Passivation on the Photoluminescence Spectral Emission of Silicon Nanostructures Embedded in SiO2., 11/2006, Activity Report (Laboratório Nacional de Luz Síncrotron),Vol. 1, pp.1-3, Campinas, SP, Brasil, 2006 *
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3.
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DOI, I.; MARINS, E. S. V. P.; C. DE QUEIROZ, Jose Eudoxio; Ligth Gain from Silicon Nanocrystals by Passivation., 10/2006, Activity Report (Laboratório Nacional de Luz Síncrotron),Vol. 1, pp.1-3, Campinas, SP, Brasil, 2006 *
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4.
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MARINS, E. S. V. P.; MESTANZA, S.N.M.; DOI, I.; Influence of Nucleation Parameters in the Spatial Distribution of the Ge Nanocrystals formed by LPCVD, 10/2006, Materials Science in Semiconductor Processing,Vol. 9, Fac. 45, pp.828-839, Estados Unidos da América, 2006 *
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5.
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MARINS, E. S. V. P.; MUNOZ, S. N. M.; DOI, Doi, I.; Influence of Nucleation Parameters in the Spatial Distribution of the Ge Nanocrystals formed by LPCVD, 01/2006, Materials Science in Semiconductor Processing,Vol. 1, pp.1-3, Estados Unidos da América, 2006 *
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Circulação Internacional
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MSC. RICARDO COTRIN TEIXEIRA -, MSc. Ricardo Cotrin Teixeira -; DOI, I.; DINIZ, J. A.; PROF. DR. JACOBUS W SWART - PE, Prof. Dr. Jacobus W Swart - Pe; ZAKIA, M. B. P.; Morphological study of polycrystalline SiGe alloy deposited by vertical LPCVD, 12/2006, Brazilian Journal of Physics,Vol. 36, Fac. 2A, pp.466-469, São Paulo, SP, Brasil, 2006 *
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2.
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LIRA, J.G.A.; OLIVEIRA JÚNIOR, A. C.; FREIRE, R. C.S.; DOI, I.; LUCIANO, B.A.; SWART, Jacobus Willibrordus; Dynamic Characterization of Thermo-Resistive Micro-Sensor, 01/2006, IEEE Transaction on Instrumentation and Measurements,Vol. 3, pp.1647-1651, New York, Estados Unidos da América, 2006 *
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3.
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KNIZHNIK,, A.; SAFONOV, A.A.; ISKANDAROVA,, I.; BAGATUR'YANTS,, A.; POTAPKIN,, B; FONSECA, L.; STOKER, M.W.; First-Principles Investigation of the WC/HfO2 Interface Properties, 01/2006, Journal of Applied Physics,Vol. 1, Fac. 1, pp.1-5, New York, Estados Unidos da América, 2006
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4.
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KNIZHNIK,, A.; SAFONOV, A.A.; ISKANDAROVA,, I.; BAGATUR'YANTS,, A.; FONSECA, L.; POTAPKIN,, B; Segregation Trends of the Metal Alloys Mo-Re and Mo-Pt onHfO 2: A First-Principles Study, 01/2006, Journal of Applied Physics,Vol. 1, Fac. 1, pp.1-6, New York, Estados Unidos da América, 2006
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5.
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MUNOZ, S. N. M.; RODRIGUES, E.; FRATESCHI, N.C.; Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO_2 matrix, 01/2006, Journal of Materials Science,Vol. 1, pp.1-12, London, Reino Unido, 2006 *
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6.
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MARINS, E. S. V. P.; MESTANZA, S.N.M.; C. TEIXEIRA, Ricardo; DOI, I.; Influence of nucleation parameters in Ge NCs formation by LPCVD, 01/2006, Journal of the Electrochemical Society,Vol. 2006, Fac. 04, pp.339-343, Manchester, NH 03108, Estados Unidos da América, 2006 *
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7.
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MESTANZA, S.N.M.; FRATESCHI, N.C.; Electron cyclotron plasma etching damage investigated by InGaAs/GaAs quantum well photoluminescence, 12/2006, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures,Vol. 24, Fac. 6, pp.2726-2730, New York, Estados Unidos da América, 2006 *
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8.
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LEONARDO BRESEGHELLO ZOCCAL, Leonardo Breseghello Zoccal; DINIZ, J. A.; DOI, I.; SWART, Jacobus Willibrordus; DALTRINI, A.; S.A., MOSHKALYOV; The efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs, 01/2006, Journal of Vacuum Science and Technology. B: Microelectronics Processing and Phenomena,Vol. 1, Fac. 1, pp.1-3, New York, Estados Unidos da América, 2006 *
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9.
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MESTANZA, S.N.M.; RODRIGUES, E.; BIASOTTO, C.; DOI, I.; DINIZ, J. A.; SWART, Jacobus Willibrordus; Characterization and Modeling of Antireflective Coatings of SiO2, Si_3 N_4, and SiOxNy Deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition, 03/2006, Journal vaccum science and technology B,Vol. 24, Fac. 2, pp.823-827, New York, Estados Unidos da América, 2006 *
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10.
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BIASOTTO, C.; DINIZ, J. A.; DALTRINI, A.; S.A., MOSHKALYOV; DOI, I.; DR. MARCELO DE JESUS RANGEL MO, Dr. Marcelo de Jesus Rangel Mo; SWART, Jacobus Willibrordus; Silicon nitride suspended membranes deposited by ECR-CVD plasma., 01/2006, Materials Science and Engineering. B, Solid State Materials for Advanced Technology,Vol. 1, Fac. 1, pp.1-3, Amsterdam, Holanda, 2006 *
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11.
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MOLOGNI, J. F.; ALVES, M. A. R.; DA SILVA BRAGA, Edmundo; Numerical Study on Performance of Pyramidal and Conical Isotropic Etched Single Emitters, 01/2006, Microelectronics Journal,Vol. 37, pp.152-157, Reino Unido, 2006 *
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12.
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CARVALHO, E.J.; ALVES, M.A.R.; BRAGA, E.S.; CESCATO, L.; SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si, 01/2006, Microelectronics Journal,Vol. 1, Fac. 1, pp.1-6, Reino Unido, 2006
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13.
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MUNOZ, S. N. M.; RODRIGUES, E.; FRATESCHI, N.C.; The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO_2, 08/2006, Nanotechnology (Bristol),Vol. 17, pp.4548-4553, Bristol, Reino Unido, 2006 *
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14.
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MSC. RICARDO COTRIN TEIXEIRA -, MSc. Ricardo Cotrin Teixeira -; DOI, I.; PROF. DR. JACOBUS W SWART - PE, Prof. Dr. Jacobus W Swart - Pe; DINIZ, J. A.; ZAKIA, M. B. P.; CV characteristics of polycrystalline SiGe Films with Low GE Concentration, 12/2006, Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms,Vol. 253, Fac. 1-2, pp.37-40, Amsterdam, Holanda, 2006 *
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15.
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GELAMO, R.V.; TRASFERETTI, B. C.; DURRANT, S.F.; ROUXINOL, F. P.; GADIOLI, G. Z.; BICA DE MORAES, M.A.; Infrared Spectroscopy Investigation of Various Plasma-Deposited Polymer Films Irradiated With 170 keV He+ ions, 01/2006, Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms,Vol. 249, Fac. 1, pp.162-166, Amsterdam, Holanda, 2006 *
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16.
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J. W. MENEZES, J. W. Menezes; CESCATO, L.; CARVALHO, E.J.; BRAGA, E.S.; Recording different geometrics of 2D hexagonal photonic crystals by choosing the phase between two-beam interface exposures, 01/2006, Optics Express,Vol. 14, Fac. 19, pp.8578-8583, Washington, Estados Unidos da América, 2006
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17.
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NELI, ROBERTO RIBEIRO; DOI, I.; DINIZ, J. A.; SWART, Jacobus Willibrordus; Development of process for far infrared sensor fabrication, 01/2006, Sensors and Actuators. A, Physical,Vol. 1, Fac. 1, pp.400-406, Lausanne, Suiça, 2006 *
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18.
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DOI, I.; NELI, ROBERTO RIBEIRO; DINIZ, J. A.; SWART, Jacobus Willibrordus; Development of Process for Far Infrared Sensor Fabrication, 01/2006, Sensors and Actuators. A, Physical,Vol. 131, pp.400-406, Lausanne, Suiça, 2006 *
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19.
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BIASOTTO, C.; BOSCOLI, F. A.; MSC. RICARDO COTRIN TEIXEIRA -, MSc. Ricardo Cotrin Teixeira -; DINIZ, J. A.; DALTRINI, A.; S.A., MOSHKALYOV; DOI, I.; Silicon Oxide Deposition by ECR Plasma for MEMS Applications, 01/2006, Thin Solid Films,Vol. 1, pp.1-3, Lausanne, Suiça, 2006 *
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* Esta produção está associada também a outros órgãos
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